Enhancement of characteristic temperature in In/sub 0.81/Ga/sub 0.19/As/InGaAsP multiple quantum well laser operating at 1.74 /spl mu/m for laser monitor

摘要

InGaAs/InGaAsP compressively strained quantum well lasers operating at 1.74 /spl mu/m has been fabricated with the thin carrier blocking layers sandwiching the active layer for carrier confinement. The laser characteristic temperature (T/sub 0/) of 85 K has been obtained, which is a high value in ever reported InGaAsP lasers in this wavelength range.