Broadband noise model for InP/InGaAs HBTs

摘要

A complete low-frequency (0.2 Hz to 500 kHz) and high-frequency (2 to 26 GHz) noise characterization as a function of emitter-geometry, temperature and bias-point of InP/InGaAs HBTs was carried out. The measured noise characteristics are validated by an equivalent circuit model with associated noise sources at different device temperatures, demonstrating an excellent agreement with the measurements.