All epitaxial single-fused 1.55 /spl mu/m vertical cavity laser based on an InP Bragg reflector

摘要

We have realised all epitaxial 1.55 /spl mu/m vertical cavity lasers by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32 period p-doped (C) AlGaAs/GaAs top mirror to a half-cavity structure consisting of a 50 period n-doped (Si) GaInAsP/InP bottom mirror and 9 QW GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed for temperatures up to 40/spl deg/C and at pulse lengths of 10 /spl mu/s up to 5/spl deg/C. The minimum threshold current density at room temperature is 1.8 kA/cm/sup 2/ for a device diameter of 55 /spl mu/m. Compared to non-oxidised laser diodes, the oxidation decreases the threshold currents significantly.