InP-based 1.5 /spl mu/m vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors

摘要

Room temperature pulsed operation of a novel 1.5 /spl mu/m vertical cavity surface emitting laser is reported. A GaAs-Al/sub 0.95/Ga/sub 0.05/As heterostructure is grown directly on the patterned InGaAsP-InP quantum well active region. Selective lateral oxidation of a lattice matched In/sub 0.52/Al/sub 0.48/As layer is used for current confinement and, to create the top Al/sub x/O/sub y/-GaAs distributed Bragg reflector. The minimum threshold current is 12 mA.