An all-epitaxial InP-based 1.55 /spl mu/m VCSEL process with defect-free Al/sub x/O/sub y//GaAs distributed Bragg reflector mirrors

摘要

A 1.55 /spl mu/m InP-based vertical cavity surface emitting laser process, which uses growth of defect-free Al(Ga)As/GaAs distributed Bragg reflector mirrors on patterned InP-based heterostructures was designed. This new mirror technology enabled the formation of a short-stack Al/sub x/O/sub y//GaAs DBR mirror. In addition, the formation of a dielectric aperture by the partial oxidation of lattice-matched InAlAs was characterized and incorporated into the process.