A proposal for improving cutoff-frequency breakdown-voltage products of HEMTs

摘要

The breakdown-voltage cutoff-frequency product gives a figure of merit of FETs/HEMTs. This paper studies it from a view point of energy-bandgaps of channel materials, and proposes a bandgap engineered device for improving the product. V/sub B//spl middot/f/sub T/ of an InGaAs HEMT can be doubled by introducing a (InGaAs to InP) graded composition zone.