Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers

摘要

Abstract: The linewidth enhancement factor, $alpha@, plays a key role in our ability to obtain spatially coherent output from high-power semiconductor lasers and amplifiers. To obtain $alpha values, modal gain and carrier-induced refractive index change have been measured in broad-area quantum well epitaxial structures with various well depths, widths, and compositions as functions of current density. !7