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首页> 外文期刊>Applied Physics Letters >Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor
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Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor

机译:具有高模态增益和零线宽增强因子的亚单层InGaAs / GaAs量子点激光器

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摘要

The gain spectra of a submonolayer (SML) InGaAs/GaAs quantum dot (QD) laser working at 30degreesC were measured using the Hakki-Paoli method. It is found that the maximum modal gain of QD ground states is as high as 44 cm(-1) and no gain saturation occurs below the threshold at the lasing wavelength of 964.1 nm. When the injection current is about 0.98 times the threshold, the gain spectrum becomes symmetric with respect to the lasing wavelength, and zero-linewidth enhancement factor is observed. These properties are attributed to the high density and the high uniformity of SML QDs in our laser diode. (C) 2004 American Institute of Physics.
机译:使用Hakki-Paoli方法测量了在30摄氏度下工作的亚单层(SML)InGaAs / GaAs量子点(QD)激光器的增益光谱。发现QD基态的最大模态增益高达44 cm(-1),并且在964.1 nm的激光波长下,在阈值以下不会出现增益饱和。当注入电流约为阈值的0.98倍时,增益谱相对于激光波长变得对称,并且观察到零线宽增强因子。这些特性归因于我们的激光二极管中SML QD的高密度和高均匀性。 (C)2004美国物理研究所。

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