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Life testing and failure analysis of GaN/AlGaN/InGaN light-emitting diodes

机译:GaN / AlGaN / InGaN发光二极管的寿命测试和失效分析

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Abstract: Our studies of device lifetime and the main degradation mechanisms in Nichia blue LEDs date back to Spring 1994. Following the initial studies of rapid failures under high current electrical pulses, where metal migration was identified as the cause of degradation, we have placed a number of Nichia NLPB-500 LEDs on a series of life tests. The first test ran for 1000 hours under normal operating conditions (20 mA at 23$DGR@C). As no noticeable degradation was observed, the second room temperature test was performed with the same devices but with a range of currents between 20 and 70 mA. After 1600 hours, some degradation in output intensity was observed in devices driven at 60 and 70 mA, but it was still less than 20%. The subsequent tests included stepping up the temperature by 10$DGR@C in 500 h intervals up to a final temperature of 85$DGR@C using the same currents applied in the second test. This work reviews the failure analysis that was performed on the degraded devices and the degradation mechanisms that were identified.!13
机译:摘要:我们对Nichia蓝色LED的器件寿命和主要降解机理的研究可以追溯到1994年春季。在对大电流电脉冲下的快速故障进行了初步研究之后,我们发现金属迁移是降解的原因,因此,我们对这种工艺进行了研究。一系列寿命测试中的Nichia NLPB-500 LED数量。第一次测试在正常操作条件下运行1000小时(23 $ DGR @ C时为20 mA)。由于未观察到明显的降解,因此使用相同的设备但在20至70 mA的电流范围内进行了第二次室温测试。 1600小时后,在以60和70 mA驱动的设备中观察到了输出强度的一些下降,但仍低于20%。随后的测试包括使用第二次测试中施加的相同电流以500 h的间隔将温度升高10 $ DGR @ C,直到最终温度达到85 $ DGR @ C。这项工作回顾了在降级设备上执行的故障分析以及确定的降级机制。!13

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