Amorphous silicon thin-film transistors with a hot-wire active-layer deposited at high growth rate

摘要

High-quality thin film transistors (TFT) with hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire (HW) chemical vapor deposition as the active layer at growth rates above 20 A/s are compared to TFTs with a-Si:H deposited by RF glow discharge at 1 A/s.The subgap absorption measured by the constant photocurrent method and steady-state photoconductivity measured between source and drain are used to characterize the a-Si:H in the TFT.The activation energy of the dark conductivity is measured as a function of the gate voltage to obtain the position of the Fermi level.The effect of a bias stress on the TFT transfer curve is obtained.