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Difference Between Wafer Temperature and Thermocouple Reading during Rapid Thermal Processing

机译:快速热处理过程中晶片温度与热电偶读数的差异

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Thermocouples are foten used as a calibration standard for rapid thermal processing. Although it has been recognized that the thermocouple temeprature can be different from the wafer temeprature, the magnitude of the temeprature difference is difficult to quantify. In this work, we present a simple analytical model to demonstrate the difference betwee nthe thermocouple temperature and the true wafer temperature. The resutls show that a large difference can exist betwee nthe thermocouple and the wafer temeprature. This is because the optical and thermophysical properties of the thermocouple and hte glue material are different from those of the wafer. The model resutls show that temperature measurement becomes more accurate if fien diameter thermocouple wires with very low emissivity are used.
机译:热电偶是FOTEN用作快速热处理的校准标准。 虽然已经认识到,热电偶克雷污水可能与晶片仪器不同,但难以量化的近阳差的幅度。 在这项工作中,我们展示了一个简单的分析模型来证明热电偶温度和真实晶片温度之间的差异。 Resutls表明,在热电偶和晶圆上建筑之间存在大的差异。 这是因为热电偶和HTE胶材料的光学和热物理性质与晶片的光学和热物理性质不同。 如果使用具有非常低发射率的FIIN直径热电偶电线,则重构模型表明温度测量变得更加准确。

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