Orientation dependent growth of TmAs wires in GaAs grown by MBE

摘要

Thulium doped gallium arsenide has been grown by Molecular Beam Epitaxy (MBE) on both (100), (311)B and (111)A oriented GaAs substrates. Above the solubility limit for Tm in GaAs, free precipitation of TmAs occurs and this can be either as dots, wires or bifurcated trees, depending on growth conditions. We show that the substrate orientation has a marked effect on the form of the precipitates and provides a means to control the microstructure of TmAs in its wire-like form.