The role of scanning cathodoluminescence in the development of MOVPE growth of GaAs/AlGaAs V-groove quantum wires

摘要

GaAs/AlGaAs quantum wire growth onto 'V' groove substrates of GaAs by MOVPE is now an established technique. In this paper we show how low temperature scanning cathodoluminescence (CL) can reveal the presence of quantum wires and the distribution of variations in the thickness of the GaAs quantum wells. We also show how CL can detect the existence of a vertical AlGaAs quantum well. One dimensional 'V' groove quantum wire structures have different luminescent/temperature properties to quantum well material and our variable temperature CL spectral studies have demonstrated this.