首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual >A 10 Gb/s 12/spl times/12 cross-point switch implemented with AlGaAs/GaAs heterojunction bipolar transistors
【24h】

A 10 Gb/s 12/spl times/12 cross-point switch implemented with AlGaAs/GaAs heterojunction bipolar transistors

机译:利用AlGaAs / GaAs异质结双极晶体管实现的10 Gb / s 12 / spl times / 12交叉点开关

获取原文

摘要

A 12/spl times/12 cross-point switch is reported which operates with data rate per channel of 10 Gb/s. The aggregate data rate for the switch, 120 Gb/s, is one of the highest of any reported IC. The circuit is based on AlGaAs/GaAs HBT technology and employs a double switching architecture to minimize jitter. An rms jitter below 4 psec has been demonstrated.
机译:报告了一个12 / spl times / 12交叉点开关,该开关以每通道10 Gb / s的数据速率工作。交换机的总数据速率为120 Gb / s,是所有报告的IC中最高的数据速率之一。该电路基于AlGaAs / GaAs HBT技术,并采用双开关架构以最大程度地降低抖动。已经证明了低于4皮秒的均方根抖动。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号