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Materials screening for attenuating embedded phase-shift photoblanks for DUV and 193-nm photolithography

机译:用于DUV和193 nm光刻的衰减嵌入式相移光敏坯的材料筛选

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Abstract: We surveyed more than 150 different materials as candidates for optically tunable (at 248 nm and 193 nm), attenuating embedded phase-shift masks. Multicomponent materials with four distinct microstructures: (1) composites, (2) cermets, (3) multilayers, and (4) copolymers, where one component was optically clear at the application wavelength and the other component more optically absorbing, provided a systematic approach for adjusting the needed optical properties: specifically, optical transmission and $pi@-phase-shift. From evaluation of optical properties and other mask manufacturability issues, including chemical and radiation durability, etch selectivity, alignment and inspection properties, film stress and adhesion, we identified promising nitride and oxide materials based on MN$-x$/-AIN (M $EQ Cr, Mo, W,...) and M'O$-y$/-RuO$-2$/ (M' $EQ Al, HF, Zr...) as well as promising polymers.!19
机译:摘要:我们调查了150多种不同的材料作为光学可调(在248 nm和193 nm)的候选材料,这些材料可衰减嵌入式相移掩模。具有四种不同微结构的多组分材料:(1)复合材料,(2)金属陶瓷,(3)多层和(4)共聚物,其中一种组分在应用波长下是光学透明的,而另一种组分在光学上更具吸收性,提供了一种系统的方法用于调节所需的光学特性:特别是光传输和$ pi @ -phase-shift。通过评估光学性能和其他掩模可制造性问题,包括化学和辐射耐久性,蚀刻选择性,对准和检查性能,膜应力和附着力,我们基于MN $ -x $ /-AIN(M $ EQ Cr,Mo,W,...)和M'O $ -y $ /-RuO $ -2 $ /(M'$ EQ Al,HF,Zr ...)以及有前途的聚合物!19

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