首页> 外国专利> System, apparatus and method for maskless lithography that emulates binary, attenuating phase-shift and alternating phase-shift masks

System, apparatus and method for maskless lithography that emulates binary, attenuating phase-shift and alternating phase-shift masks

机译:用于模拟二进制,衰减相移和交替相移掩模的无掩模光刻的系统,装置和方法

摘要

A tilting mirror design for maskless lithography is proposed. In this mirror, the tilting portion occupies about 60% of the entire element area. The surrounding space is made 100% reflective and out-of-phase with respect to the tilting portion. The ratio between the tilting portion of the mirror and the out-of-phase portion is optimized in order to result in equal positive and negative maximum amplitudes over a complete range of tilt angles.
机译:提出了一种用于无掩模光刻的倾斜镜设计。在该镜子中,倾斜部分占据整个元件面积的约60%。使周围空间相对于倾斜部分具有100%反射性和异相性。镜的倾斜部分和异相部分之间的比率被优化,以便在整个倾斜角范围内产生相等的正和负最大振幅。

著录项

  • 公开/公告号US7274502B2

    专利类型

  • 公开/公告日2007-09-25

    原文格式PDF

  • 申请/专利权人 NABILA BABA-ALI;ARNO BLEEKER;

    申请/专利号US20040018483

  • 发明设计人 ARNO BLEEKER;NABILA BABA-ALI;

    申请日2004-12-22

  • 分类号G02B26/00;

  • 国家 US

  • 入库时间 2022-08-21 21:02:21

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