Performance improvement of HgCdTe photoconductive detectors

摘要

Abstract: Highly sensitive HgCdTe infrared photoconductive detectors have been developed for detecting 5 - 8 micrometer wavelength band. HgCdTe crystals were grown with the solid state recrystallization method and Cd composition was adjusted to 23.5%. The detectors possess an optical mask and asymmetric electrodes. The responsivity of the detectors depends on bias current direction. Higher responsivity was obtained with bias current flowing from a wide electrode to a narrow one. This responsivity value is 5 to 10 times larger than that of a standard detector which has symmetric electrodes and no optical mask. One of the new highly sensitive detectors was installed in a thermal imaging system and was found to be applicable to non-destructive diagnoses of buildings. !10