Effect of HgCdTe-passivant interface properties on the responsivity performance of photoconductive detectors

摘要

The variations in the responsivity, minority carrier lifetime and shunt resistance (arising due to surface accumulation) have been measured as a function of the gate potential in a HgCdTe gated photoconductor test structure. The measured variations have been shown to be in very good agreement with our model previously published. It is predicted that the optimisation of the trap density and fixed charges at the HgCdTe-passivant interface can lead to improvements in the response uniformity of the detector elements in an array.