Method of fabricating a photoconductive detector of increased responsivity

摘要

A method of fabricating a photoconductive detector of increased responsivity, such as an infrared detector, from a slab of N- type, intrinsic bulk semiconductor material comprises shielding part of the detector active area between the positive and negative contacts with a material limiting photon exposure of the active area to retain a reduced detector active area sufficiently spaced from the negative contact to permit negligible loss in responsivity due to recombination of the photogenerated hole carriers at the negative contact.