Strain-engineered semiconductor heterostructures for novel optoelectronic devices

摘要

Abstract: In this paper we show that strain is a useful effect and in addition to improving the performance of existing devices it may be used with greater functionality to demonstrate novel optoelectronic devices. We give as examples two such devices that we have conceived and demonstrated, one each in the two respective areas of strain, lattice-mismatch induced and thermal expansion coefficient mismatch induced. The higher performance and functionality in these devices demonstrate that strain engineered heterostructures are a very promising area for device research and development. !12