Influence of double-barrier quantum well asymmetry on RTD switching time

摘要

Abstract: The influence of double-barrier quantum well asymmetry on the switching time of RTDs is studied. For circuit simulation purposes the RTD is modeled as a resistance in series with a parallel combination of a non-linear dependent current source and a non-linear capacitor. The current source embodies an analytic expression for the I(V) characteristics derived from basic principles. The capacitor embodies a C(V) equation derived from a self-consistent numerical two-band model simulation of the structure. It is found that the switching time is most sensitive to asymmetry on the emitter-side barrier, and that the smallest emitter barrier width structure exhibits the smallest switching time. !14