Structure-dependent reliability assessment of 1.3 /spl mu/m InGaAsP/InP uncooled laser diodes by accelerated aging test

摘要

The purpose of this paper is to demonstrate reliability analysis of 1.3 /spl mu/m InGaAsP/InP MQW-PHB laser diodes (LD) for high speed optical communication systems. We have accelerated aging tests and compared the assessment of 1.3 /spl mu/m InGaAsP/InP strain-compensated MQW PBH-LD's with different numbers of quantum well (N/sub QW/) and active width (W/sub A/). The experimental results show that /spl Delta/I/sub th/ is related with W/sub A/ rather than with N/sub QW/. For the same W/sub A/, we have observed that the variation of N/sub QW/ has less effect on /spl Delta/I/sub th/ which is primarily due to the limitation of the fabrication process in controlling the uniformity and homogeneity in the MQW layer.