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Contamination control for processing DUV chemically amplified photoresists

机译:用于处理DUV化学放大光刻胶的污染控制

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Abstract: Chemically amplified DUV photoresists have a sensitivity to certain airborne chemical contaminants. Processing these resists requires control of the environment within the process tooling. This study explores the contamination threshold levels to meet minimum established lithography criteria as well as the effectiveness of the equipment in providing such an environment. A DUV lithography cluster consisting of a SVGL MICRASCAN-II linked to an SVG Series 90 track are the platform for this study. Both the stepper and track utilize Donaldson stacked carbon filters, each is sized to design air flow rate. Measurement and control of two (2) known contaminants, n-methyl2-pyrolidone (NMP) and ammonia (NH$- 3$/), are investigated in the stepper chamber, the track chamber, and the surrounding environment. Gas chromatography (GC) and ion mobility spectrometry (IMS) are used to measure NMP and NH$-3$/ levels, respectively, and provide the basis for the data presented. Criteria for resist profile, critical dimension (CD) and post exposure delay (PED) in a single layer resist system i.e., without resist top-coat (RTC), were set such that contamination effects are of no consequence. Contaminant threshold levels to meet this lithography criteria have been determined. Data that underscores the trade-off between having a single purpose filter or a dual purpose filter design that removes both NMP, an organic, and NH$-3$/, an inorganic, are analyzed. The effectiveness (efficiency and life time) of this dual purpose filter in reducing the contaminants to low enough levels for maintaining lithography acuity, as established by the criteria, are summarized. A cost analysis highlighting the economic trade-off of using either RTC in a non-filtered environment or providing a conducive filtered environment for single layer resist processing are analyzed. Conclusions based upon data from ambient conditions, both inside and outside the lithography cluster and the performance of the equipment are made. Recommendations are made on what constitutes a `clean' environment and when the use of RTC may become necessary. !5
机译:摘要:化学放大的DUV光刻胶对某些空气传播的化学污染物具有敏感性。加工这些抗蚀剂需要控制加工工具内的环境。这项研究探索了污染阈值水平,以满足最低的光刻标准以及设备在提供这种环境中的有效性。这项研究的平台是一个由SVGL MICRASCAN-II链接到SVG Series 90轨道的DUV光刻集群。踏步机和履带都使用唐纳森(Donaldson)叠层碳过滤器,每一个的尺寸均可设计出空气流速。在步进室,履带室和周围环境中研究了两种(2)已知污染物,n-甲基2-吡咯烷酮(NMP)和氨(NH $ -3 $ /)的测量和控制。气相色谱法(GC)和离子迁移谱法(IMS)分别用于测量NMP和NH $ -3 $ /的水平,并为所提供的数据提供基础。设置单层光刻胶系统中光刻胶轮廓,临界尺寸(CD)和曝光后延迟(PED)的标准,即不使用光刻胶面漆(RTC)时,不会产生污染影响。已经确定了满足该光刻标准的污染物阈值水平。分析了强调在去除有机物NMP和无机物NH $ -3 $ /的单目的过滤器或双重目的过滤器设计之间进行权衡的数据。总结了该双重用途过滤器在将污染物减少到足够低的水平以保持光刻敏锐度方面的有效性(效率和使用寿命),如标准所确定的那样。分析了成本分析,突出了在非过滤环境中使用RTC或为单层抗蚀剂处理提供有利的过滤环境的经济权衡。基于光刻集群内部和外部的环境条件数据以及设备性能得出结论。针对什么构成“清洁”环境以及何时需要使用RTC提出了建议。 !5

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