Additive for chemically amplified photoresist composition and chemically amplified photoresist composition containing thereof

摘要

PURPOSE: An additive and a chemically amplified photoresist composition including thereof are provided to reduce a collapse of a pattern, and to maintain a width of the pattern during a process requiring a micro pattern for obtaining a uniform pattern. CONSTITUTION: An additive for chemically amplifying a photoresist composition contains a compound marked as chemical formula 1. In the chemical formula 1, R1 refers to -OH or -SH. R2~R4 are alkyl groups with the carbon number of 1~10. A chemically amplified photoresist composition includes the additive, a photoacid generator, and a photosensitive polymer. 0.1~20mol% of additive is contained in the composition. A formation method of a photo resist patter using the composition comprises a step of spraying the chemically amplified photoresist composition on the upper side of an etched layer.