Vacuum photoresists on a base of phenoxazine and their lithographic properties

摘要

Abstract: The lithographic properties of the vacuum vapor deposited thin films based on the benzo$LB@a$RB@phenoxazine derivatives applied in the `all-dry' lithography process with laser patterning ($lambda $EQ 266 nm) have been studied. As shown, film sensitivity and resolution, line-edge profile, dry etch resistance and stability under storage and ion implantation depend highly on the chemical structure of the side substitutes. It was found that the treatment of the films with B$+$PLU$/ and P$+$PLU$/ ions with dose equal to or more than 1.8*10$+15$/ ion/cm$+2$/ and energy equal to 30 keV results in the formation of thin carbonized surface film layer. Its chemical structure includes phosphorous compounds such as PhP$-3$/, (PhO)$-3$/PO, (PhO)$-3$/P in the case of P$+$PLU$/ ion treatment. Modified films display higher dry etch resistance. The fluorination of the vacuum vapor deposited and modified films in C$-3$/F$-$INF$/ plasma is under consideration. !12