Choice of Silicon Etch Processes for Opto- and Microelectronic Device Fabrication Using Inductively Coupled Plasmas

摘要

Silicon is a suitable material for an ever-expanding range of micro- and nano-scale opto- and microelectronic devices. In this work three different inductively coupled plasma (ICP) etching process strategies designed to meet the various different challenges that arise in micro- and nano-scale etching of silicon are described