A strained InAlAs/InGaAs superlattice avalanche photodiode for operation at an IC-power-supply voltage

摘要

For operation of an avalanche photodiode (APD) at an IC-power-supply voltage, less than 5 V, a novel edge-coupled waveguide superlattice (SL) APD is proposed. Using a strained InAlAs/InGaAs SL, multiplication factor larger than 10 is experimentally demonstrated at a bias voltage less than 7 V. A wide 3dB-bandwidth of 8 GHz is obtained at a multiplication factor of 3.