首页> 外文会议>Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on >Theoretical analysis of enhanced electroabsorption change due to light-hole subband transition in lattice-matched wide quantum wells
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Theoretical analysis of enhanced electroabsorption change due to light-hole subband transition in lattice-matched wide quantum wells

机译:晶格匹配宽量子阱中由于光孔子带跃迁而增强的电吸收变化的理论分析

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In this work, we have studied theoretically the enhancement of TE-polarized electroabsorption EA change in lattice-matched InGaAsP MQW structures. It is demonstrated that the light-hole subband transition plays the dominant role in the enhanced EA change in wide quantum wells.
机译:在这项工作中,我们从理论上研究了晶格匹配的IngaASP MQW结构的TE偏振电气吸收EA变化的增强。据证明光孔子带转换在宽量子阱中的增强EA变化中起着主导作用。

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