Fabrication of low-temperature bottom-gate poly-Si TFTs on large-area substrate by linear-beam excimer laser crystallization and ion doping method

摘要

A novel crystallization procedure of Si films using a linear-beam excimer laser combined with a non-mass-separated ion doping method on a large-area is proposed for fabrication of poly-Si TFTs with maximum process temperature of 400/spl deg/C. Fabricated TFTs show sufficiently high mobilities to drive peripheral circuitry and yet retain a low leakage current suitable to pixel transistors. TFTs' on-current deviation of well under /spl plusmn/20% has been obtained for both nand p-channel TFTs over an entire substrate. Long-term reliability of the TFTs has also been confirmed using a CMOS ring oscillator.