Fabrication of Low-Temperature Bottom-Gate Poly-Si TFTs on Large-Area Substrate by Linear-Beam Excimer Laser Crystallization and Ion Doping Method

摘要

A novel crystallization procedure of Si films using a linear-beam excimer laser combined with a non-mass-separated ion doping method on a large-area is proposed for fabrication of poly-Si TFTs with maximum process temperature of 400℃. Fabricated TFTs show sufficiently high mobilities to drive peripheral circuitry and yet retains a low leakage current suitable to pixel transistors. TFTs' on-current deviation of well under ± 20% has been obtained for both n-and p-channel TFTs over an entire substrate. Long-term reliability of the TFTs has also been confirmed using a CMOS ring oscillator.