STUDY OF SiGe/Si HETEROSTRUCTURE ELECTRONIC DEVICES

摘要

The research and development of SiGe/Si electronic devices are discussed. Our studies of the advanced SiGe/Si HBTs and the side-wall oxide self-aligned technique are described. A lot of experimental and theoretical results on SiGe/Si RTDs are presented, in which very different features of heavy and light hole resonant transport can be well explained.