LEC-growth and characterization of n- and p-type Fe-doped InP

机译：LEC的生长和n和p型掺杂Fe的InP的表征

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The growth of n- and p-type Fe doped InP crystals using the liquid encapsulated Czochralski (LEC) technique by means of co-doping with Zn and Te, respectively, is discussed. The incorporation of the dopants was examined by chemical, electrical and optical analysis. The electronic transport properties of the InP:Fe,Zn crystals are investigated by comparing Hall effect measurements and theoretical calculations indicating a partial compensation of the Zn atoms by a deep donor.

机译：讨论了分别通过与Zn和Te共掺杂的液体封装的Czochralski（LEC）技术来生长n型和p型Fe掺杂的InP晶体。通过化学，电和光学分析检查掺杂剂的掺入。通过比较霍尔效应测量和理论计算来研究InP：Fe，Zn晶体的电子传输特性，该理论计算表明深施主对Zn原子进行了部分补偿。

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《Indium Phosphide and Related Materials, 1991., Third International Conference.》|1991年|P.331-334|共4页
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Mosel F.; Seidl A.; Hofmann D.; Muller G.;
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中图分类无线电电子学、电信技术;
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专利

1. DEEP LEVEL DEFECTS IN N- AND P-TYPE FE IMPLANTED INP [J] . Bakry AM., Darweesh S. Physica, A. Statistical mechanics and its applications . 1997,第1a2期

机译：N型和P型FE植入INP中的深层缺陷
2. Structural and optical characterization of p-type highly Fe-doped SnO_2 thin films and tunneling transport on SnO_2:Fe/p-Si heterojunction [J] . Walid Ben Haj Othmen, Zied Ben Hamed, Brigitte Sieber, Applied Surface Science . 2018,第MARa15期

机译：p型高Fe掺杂SnO_2薄膜的结构和光学表征以及在SnO_2：Fe / p-Si异质结上的隧穿传输
3. Characterization of a Photoelectrochemical Cell Using Porous TiO2 and Its Application to a Z-Scheme System for Water Splitting in Combination with a P-Type InP Photocathode [J] . Park Ji Hun, Yoon Jong Sun, Oh Se Young Journal of nanoscience and nanotechnology . 2017,第8期

机译：使用多孔TiO2的光电化学电池的表征及其在Z形式系统与P型INP光电阴极组合的Z方案系统中的应用
4. LEC-growth and characterization of n- and p-type Fe-doped InP [C] . Mosel F., Seidl A., Institute of Electric and Electronic Engineer International Conference: Indium Phosphide and Related Materials . 1991

机译：LEC- N-和P型Fe掺杂INP的生长和表征
5. Computational characterization of prospective n- and p-type dopants in cubic boron nitride. [D] . Patton, David Clay. 1996

机译：立方氮化硼中预期的n型和p型掺杂剂的计算表征。
6. Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region [O] . L. N. Alyabyeva, E. S. Zhukova, M. A. Belkin, -1

机译：太赫兹光谱区中半绝缘掺铁InP的介电性能
7. Simulation and Characterization of Epitaxial n- and p-Type Emitters on Silicon Wafer Solar Cells [O] . Milenkovic N., Rachow T., Heinz F., 2012

机译：硅晶片太阳能电池上外延n型和p型发射极的仿真与表征
8. Ion-Implanted n- and p-type Layers in InP. [R] . Donnelly, J. P., Hurwitz, C. E. 1977

机译：Inp中的离子注入n型和p型层。

LEC-growth and characterization of n- and p-type Fe-doped InP

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