High purity InP grown by chemical beam epitaxy

摘要

Optical and transport properties of InP layers that demonstrate that when growth conditions are carefully optimized, the purity of chemical beam epitaxy (CBE)-grown InP is very high are discussed. The optical properties of the grown material are analyzed the bandgap temperature dependence of InP is determined. A Hall mobility as high as 153800 cm/sup 2/ V/sup -1/ s/sup -1/ at 77 K with N/sub d/-N/sub a/=1.5*10/sup 14/ cm/sup -3/ has been obtained by adjusting the substrate and the phosphine cracker temperatures. The 2 K photoluminescence spectra show finely resolved excitonic transitions for layers grown above 535 degrees C with linewidths as narrow as 0.07 meV. Excitonic transitions have been recorded between 2 K and 250 K. The free exciton energy position leads to a highly accurate expression of the bandgap energy, which extrapolates to E/sub g/=1.347 eV at 300 K.