Growth of low dislocation density InP single crystals by the phosphorus vapor controlled LEC method

摘要

The growth of 3-in S-doped and Fe-doped and 2-in Sn-doped InP single crystals with reduced axial temperature gradients using the phosphorus vapor controlled liquid encapsulation Czochralski (PC-LEC) method is discussed. It is shown that, in the case of S-doped crystals, the dislocation-free area of the crystal is increased using the PC-LEC method, compared to that of crystals grown using the conventional LEC method. It is also shown that 3-in Fe-doped InP could be grown with a dislocation density lower than 10/sup 4/ cm/sup -2/. The average EPD was lower than 5*10/sup 3/ cm/sup -2/ in 2-in Sn-doped InP. The photoluminescence intensity of PC-LEC crystals was much higher than that of conventional LEC crystals in the case of Sn-doped InP.