Finite element analysis of dislocation density during bulk single crystal growth (effect of doping atoms in InP single crystal)

摘要

A computer code for simulation denisty in a bulk single crystal liquid encapsulated Czochralski (LEC) or Czochralski (CZ) growth process. In this computer code, the shape of crystal-melt interface and the temperature in a crystal at an arbitrary time were determined by linear interpolation of the results that were discretely obtained by heat conduction analysis of a CZ single crystal growth system.