Growth of InP bulk crystals by VGF: a comparative study of dislocation density and numerical stress analysis

机译：VGF生长InP块状晶体：位错密度和数值应力分析的比较研究

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The potential of the VGF process is analysed by using a flat bottom crucible for the growth of InP crystals with 2" diameter. Results of numerical simulations are used to design a set-up which can be run in a LEC facility. The EPD /spl ap/3/spl middot/10/sup 3/ cm/sup -2/ of the grown crystals is in accordance with calculated results based on an analysis of the thermal stress occurring during growth.

机译：通过使用平底坩埚来生长直径为2“的InP晶体来分析VGF工艺的潜力。数值模拟的结果用于设计可在LEC设施中运行的装置。EPD / spl生长晶体的ap / 3 / spl middot / 10 / sup 3 / cm / sup -2 /与根据在生长期间发生的热应力的分析的计算结果一致。

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《Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on》|1996年|P.47-49|共3页
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Zemke; D.; Leister; H.J.;
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中图分类无线电电子学、电信技术;
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2. Finite element analysis of dislocation density during bulk single crystal growth (effect of doping atoms in InP single crystal) [J] . N. Miyazaki, Y. Kuroda Journal of Crystal Growth . 1999,第1期

机译：块状单晶生长过程中位错密度的有限元分析（InP单晶中掺杂原子的影响）
3. A comparative study of thermal stress induced dislocation generation in pulled GaAs, InP, and Si crystals [J] . Journal of Applied Physics . 1981,第5期

机译：GaAs，InP和Si晶体中热应力引起的位错生成的比较研究
4. Growth of InP bulk crystals by VGF: a comparative study of dislocation density and numerical stress analysis [C] . Zemke D., Leister H.J., Institute of Electric and Electronic Engineer International Conference on Indium Phosphide and Related Materials . 1996

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Growth of InP bulk crystals by VGF: a comparative study of dislocation density and numerical stress analysis

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