Electrical and optical characterizations of Ga-doped or Sb-doped InP crystal

摘要

Electrical and optical characterizations of Ga-doped and Sb-doped InP crystal are presented. It is shown that doping with isoelectronic impurities, such as Ga or Sb, does not affect the electrical properties of InP crystal, dilute solid solutions are formed by doping InP with isoelectronic impurities, and native defects in InP can be reduced by doping with Sb.