Analysis of DBE grown GaInAsP/InP heterostructures for 1.55 mu m lasers

摘要

The quality of GaInAsP/InP heterostructures grown by chemical beam epitaxy is analyzed using the light-current characteristics of board area lasers. The optical scattering linear coefficient ( alpha s) and the effective radiative coefficient (B/sub eff/) are calculates from the comparison of experimental data with a theoretical model. The low value of alpha s (9 cm/sup -1/) indicated a low roughness of the interfaces. The value of B/sub eff/ is found to be comparable with those obtained for heterostructures grown with other techniques.