GaInAsP-InP Double Heterostructure Lasers on Si Substrate Grown by LP-MOCVD

摘要

This report summarizes the results of experimental research work on material,processing technology, and laser characterization performed at the Center for Quantum Devices under ONR contract Number N00014-93-1-0176 'GaInAsP-InP double heterostructure lasers on Si substrate grown by MOVCD'. In order to achieve this goal of the contract, the CQD research group split the divided research work into three phases (with specific tasks): Material Growth, and Laser Processing and Laser Characterization. The first phase consists of different approaches in order to increase the quality of the buffer layer and laser material. The second phase consists of the fabrication laser structure on Si substrates based on the peculiarities of structures containing residual structural stress and moderate levels of dislocation density. The third phase consists of the laser characterization of these laser diodes. Each phase contains specific tasks that was used in a systematic way to achieve GaInAsP-InP double heterostructure lasers on Si substrate.