首页> 外文会议>Electronic Components and Technology Conference, 1991. Proceedings., 41st >A novel manufacturing technology of buried RuO/sub 2/-based thick film resistors in copper-polyimide substrate
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A novel manufacturing technology of buried RuO/sub 2/-based thick film resistors in copper-polyimide substrate

机译:一种新型的铜-聚酰亚胺基埋入式RuO / sub 2 /基厚膜电阻制造技术

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A novel manufacturing technology of buried RuO/sub 2/-based thick-film resistor (TFR) in copper-polyimide system has been studied. Since electrodes of copper thin film are formed on the TFR by using photolithography and a plating method and the resistance of TFR has a widely linear relation, the resistance is determined only by the geometry of the TFR within 10% variation to the designed value. A specially optimized pulse laser irradiates the TFR through the polyimide film in order to accurately adjust the resistance without any degradation of the overcoating polyimide film on the TFR. The surface of the TFR is modified, and the resistance decreases with the shot number of the laser. Analysis by heat conduction theory suggests that the non-degradation of the polyimide film is based on the shortness of the laser pulse duration. Results of reliability tests show the stability of the resistance of laser-modified buried TFR.
机译:研究了一种在铜-聚酰亚胺体系中掩埋RuO / sub 2 /基厚膜电阻器(TFR)的新颖制造技术。由于铜薄膜的电极是通过光刻和电镀方法在TFR上形成的,并且TFR的电阻具有广泛的线性关系,因此,电阻仅由TFR的几何形状确定,偏差在设计值的10%以内。经过特殊优化的脉冲激光通过聚酰亚胺薄膜照射TFR,以便准确调节电阻,而不会破坏TFR上的外涂层聚酰亚胺薄膜。 TFR的表面被修改,并且电阻随着激光发射次数的增加而降低。通过热传导理论的分析表明,聚酰亚胺膜的不降解是基于激光脉冲持续时间的短短。可靠性测试结果表明,激光改性的埋藏式TFR的电阻具有稳定性。

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