Infiltration synthesis of hybrid nanocomposite resists for advanced nanolithography

摘要

We demonstrate a simple ex-situ inorganic infiltration route for transforming standard organic resists into high-performance positive tone hybrid resist platform. A model thin film PMMA-AlO_x hybrid resist system has been synthesized by hybridization of PMMA with AlO_x and investigated for electron beam lithography. The approach possesses full controllability of the resist performance in terms of critical does, patterning contrast reaching up to 30 and etch resistance for plasma-based pattern transfer processes. The high selectivity Si etching capability demonstrated using a low-temperature cryo-Si etch process, based on the controlled infiltration outperforms commercial resists and typical hard mask material thermal SiO_2, with estimated achievable selectivity in excess of~300. Si nanostructures down to ~30 nm with aspect ratio up to ~17 are also transferred into the Si substrate. Easy implementation and adaptability for different inorganic infiltrations, this platform is well capable of potentially delivering the resist performance and throughput necessary for EUV lithography.