Study of Electron Drift Mobility in Nitrides Indium and Gallium

摘要

For indium and gallium nitrides, momentum scattering rates were calculated and analyzed for typical types of impurity and phonon mechanisms. For the first time, a weak-field temperature dependence of the electron drift mobility was calculated for indium and gallium nitrides in a wide range of dopant concentrations. The results of modeling were verified. Initial parameters are proposed for modeling the transport properties of electrons in a weak electric field mode. The field-velocity characteristics were simulated by the relaxation equation method.