Enhanced Eu luminescence in GaN: Eu,O-based light emitting diodes via introduction of nanostructures and nanocavities

摘要

Eu-doped GaN (GaN:Eu) has recently emerged as a promising material for red luminescence on the GaN platform, which is characterized by narrow peaks at ~620 nm from Eu ions owing to the intra-4f transitions. We have reported GaN:Eu-based red light-emitting diodes (LEDs) with an output power exceeding 1 mW at 20 mA, and are currently pursuing to further enhance the output power of GaN: Eu-based LEDs. In this presentation, we will present our recent progress on the device properties of GaN:Eu-based LEDs with several nanostructureanocavities including resonant cavity LEDs and localized surface-plasmon enhanced LEDs utilizing metal nanoparticles.