Ka Band Digitally Controlled Oscillator for FMCW Radar in 130 nm SiGe BiCMOS Technology

摘要

The paper presents a Digitally Controlled Oscillator (DCO) for a FMCW radar transceiver designed in IHP 130 nm BiCMOS SiGe technology. The circuit consist of a differential pair of heterojunction bipolar transistors (HBT), a capacitor bank and an inductor that are designed in HFSS Ansys software to improve the quality factor and decrease inductance. The presented oscillator provides a wide tuning range from 29 GHz to 40.5 GHz. The DCO is supplied from 1.8 V and dissipates 18 mW. The phase noise of the presented oscillator is equal to ?91 dbc/Hz at 1 MHz from carrier frequency.