Sub-Terahertz Detection by Fin-Shaped GaN/AlGaN Transistors

摘要

We report on the investigations of the fin-shaped GaN/AlGaN field effect transistors (FinFETs) with two lateral Schottky barrier gates exactly placed at the edges of the fin-shaped transistor channel. This kind of FinFET modification (called EdgeFET) allowed us to efficiently control the current flow in two-dimensional electron gas conduction channel. Moreover, due to depletion, regions of the channel at a certain range of reverse bias form a nanowire, which is beneficial for the tunable resonant THz detection. Our studies of current-voltage characteristics and response in the sub-terahertz frequency range confirm the validity of the approach.