Sub-THz and THz Noise Generation by Diode Heterostructures under Impact Ionization

摘要

Usage of subterahertz (sub-THz) and terahertz (THz) noise signals is widely applied to tomographic imaging, spectroscopy, calibration of radiometers, etc. The heterostructure diodes operation under impact ionization mode is considered as potential candidates to generation of noise oscillations on sub-THz and THz frequencies. Spectral analysis of time sequence of current, obtained by means of Monte Carlo simulations has been presented. Graded band gap heterostructures and heterojunction ones are taken into the account. The comparison of the noise properties of heterostructure diodes is carried out by determination of spectral noise power density.