SEMICONDUCTOR RECEIVER OF THz/sub-THz RADIATION WITH A BUILT-IN p-n TRANSITION

摘要

The invention relates to phyhsics and engineering of terahertz and sub-terahertz spectral ranges, in particular to the problem of registration of radiation in those ranges, and can be used at production of single and multi-element matrices of THz/sub-THz radiation as well. The object of the invention is in formation of a receiver of THz/sub-THz radiation with a higher sensitivity that can work in broad spectral range at moderate cooling. The semiconductor receiver of THz/sub-THz range of radiation consists of a sensitive element formed in epitaxial layer CdxHg1Te as a cross p-n transition.