Low On-state Voltage and Latch-up Immunity Thin SOI LIGBT with Multi-Segmented Trench Gates

摘要

A novel thin SOI lateral insulated gate bipolar transistor (LIGBT) with low on-state voltage drop ( Von) and latch-up immunity is proposed. The device features the multi-segmented trench gates in the z-direction, named MST LIGBT. The multi-segmented gates form multi conduction channels along the sidewalls, which increases the channel density so as to reduce Von and increase saturation current. Furthermore, the multi-segmented gates hinder the holes from being extracted by the cathode in the x- and z- direction, which attracts a large number of electrons injected from the cathode, and therefore the conduction modulation effect is enhanced. The Von of MST LIGBT reduces by 34.8% and 27.6% in comparison with those of the conventional (Con). LIGBT and the tridimensional channel (TC) LIGBT. In addition, the short circuit time of MST LIGBT increases to 1.92 μs in comparison with 1.73 μs of the Con. LIGBT and 1.81 μs of the TC LIGBT, owing to the smallest shorted cathode resistance ( RSC).