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Investigation on visible emission of ZnO films deposited on copper nitride substrates*

机译:氮化铜衬底上沉积的ZnO薄膜的可见光发射 *

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ZnO films with different oxygen gas flow rate are deposited on copper nitride substrates by radio frequency magnetron sputtering. All samples are annealed in vacuum at 350 °C for 1h. Results indicates that Cu3N diffraction phase is observed in the XRD pattern of copper nitride substrates. As ZnO layer is deposited on copper nitride substrates, Cu3N diffraction peak disappears. PL spectra of all samples shows two blue emission peaks and a green emission. Under the unbalanced stoichiometric ratio, the blue peaks are enhanced. Especially, at a low oxygen gas flow rate of 5:25 sccm, two blue peak intensity reach maximum. In this case, there are overabundance Zn atoms due to a poor oxygen atmosphere. Both interstitial Zn and various substitution defects will appear in the deposited films, thus causing the intensity increment of visible emission peaks.
机译:通过射频磁控溅射将具有不同氧气流量的ZnO膜沉积在氮化铜基板上。将所有样品在350°C的真空中退火1h。结果表明,在氮化铜衬底的XRD图案中观察到Cu 3 N衍射相。当ZnO层沉积在氮化铜基板上时,Cu3N衍射峰消失。所有样品的PL光谱均显示两个蓝色发射峰和一个绿色发射峰。在不平衡化学计量比下,蓝色峰增强。特别是在5:25 sccm的低氧气流量下,两个蓝峰强度达到最大值。在这种情况下,由于不良的氧气氛而存在过量的Zn原子。间隙锌和各种替代缺陷都将出现在沉积膜中,从而导致可见发射峰的强度增加。

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