The characteristic of Ga-doped ZnO nanorods photodetectors

摘要

In this study, high-density single crystalline Ga-doped ZnO (GZO) nanorods were grown on glass substrate by the hydrothermal method. The structural and optoelectronic properties of Gadoped ZnO nanorods are studied. The microstructure of the GZO was studied by Scanning Electrical Microscope (SEM). The structural characteristics of the GZO were measured by X-Ray Diffraction (XRD). It was found that the peaks related to the wurtzite structure ZnO (100), (002), and (101) diffraction peaks. The (002) peak indicates that the nanorods were preferentially oriented in the c-axis direction. The existence of Ga was examined by Energy Diffraction Spectra (EDS), indicating Ga atom entered into the ZnO lattice. The optical properties of the GZO were measured by photoluminescence spectra. It was found that the Ultraviolet (UV) emission located near 380 nm is dominant in the PL spectrum, which is attributed to the near band gap excitonic emission. A GZO nanorods Metal-Semiconductor-Metal (MSM) ultraviolet Photodetector (PD) was also fabricated. The photocurrent to dark-current constant ratio of the fabricated PD was approximately 15.2 when biased at 1 V.